Modeling of flopping-mode spin qubits: Beyond the two-site model

Abstract

We present a flexible modeling framework for flopping-mode spin qubits that captures the spatial structure of the double-well confinement and magnetic-field-gradient profile going beyond conventional low-energy descriptions. By using this approach, we simulate electric dipole spin resonance-based single-qubit control and evaluate the frequency and spectral purity of the Rabi oscillations across different parameter regimes. Our analysis reveals a fundamental trade-off between fast electrical driving and clean single-mode Rabi oscillations and demonstrates that the standard two-site low-energy approximation can overestimate the Rabi frequency by up to ∼20% in certain parameter regimes. We also investigate two-qubit control by considering two capacitively coupled flopping-mode qubits and derive the corresponding exchange interaction with an appropriately restricted configuration interaction treatment. Our approach reveals the interplay between the spatial profile of the double-well confinement, magnetic field gradient, and Coulomb interaction, which together govern the effective exchange coupling strength. Our spatially resolved modeling framework enables efficient exploration of double-well confinement parameters and magnetic field gradient profiles, enabling a transparent mapping from spatial device properties to flopping-mode qubit parameters and quality metrics.