Publication:
Low leakage high breakdown E-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4
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1940 since deposited on 2021-10-17
1last month
Acq. date: 2026-06-04
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Statistics
Views
1940 since deposited on 2021-10-17
1last month
Acq. date: 2026-06-04
Citations