Publication:
Analysis of dopant diffusion and defects in SiGe-channel implant free quantum well (IFQW) devices using an atomistic kinetic Monte Carlo approach
Date
Loading...
Files
Journal
Abstract
Description
Statistics
Views
1959 since deposited on 2021-10-20
6last month
Acq. date: 2026-08-19
Citations
Statistics
Views
1959 since deposited on 2021-10-20
6last month
Acq. date: 2026-08-19
Citations