Gate-induced quantum- confinement transition of a single dopant atom in a silicon FinFET

Publication:

2008

Journal article

Author(s)

Lansbergen, G.P.

;

Rahman, R.

;

Wellard, C.J.

;

Woo, I.

;

Caro, J.

;

;

;

Klimeck, G.

;

Hollenberg, L.C.L.

;

Rogge, S.

Nature Physics

1922 since deposited on 2021-10-17

Acq. date: 2026-06-06