Publication:

Reverse Gate Leakage Induced Buffer Charging and Threshold Voltage Shift of GaN HEMTs

Date

2024

Journal article

https://doi.org/10.1109/TED.2024.3473892

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Author(s)

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O'Sullivan, Barry

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Elkashlan, Rana

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Banerjee, Sourish

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Peralagu, Uthayasankaran

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Parvais, Bertrand

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Collaert, Nadine

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES

Statistics

238 since deposited on 2024-10-30

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Acq. date: 2026-05-31