Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping

Publication:

2024

Journal article

Author(s)

;

;

;

;

;

IEEE TRANSACTIONS ON ELECTRON DEVICES

246 since deposited on 2024-09-09

1last month

Acq. date: 2026-10-13