Publication:

110 GHz GeSi Electroabsorption Modulator on a 300mm SiPh Platform Enabling High-Density 400G/lane IM/DD Links

Date

2025
Proceedings Paper
https://doi.org/10.1109/ecoc66593.2025.11262984
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dc.contributor.authorBruynsteen, Cedric
dc.contributor.authorAhmad, Zohauddin
dc.contributor.authorda Silva, Leandro
dc.contributor.authorKim, Minkyu
dc.contributor.authorCoughlan, Conor
dc.contributor.authorMalik, Dharmander
dc.contributor.authorBerciano, Mathias
dc.contributor.authorLepage, Guy
dc.contributor.authorLoo, Roger
dc.contributor.authorKobbi, Hakim
dc.contributor.authorSar, Huseyin
dc.contributor.authorBipul, Swetanshu
dc.contributor.authorMarchese, Chiara
dc.contributor.authorVerheyen, Peter
dc.contributor.authorDe Heyn, Peter
dc.contributor.authorVelenis, Dimitrios
dc.contributor.authorChakrabarti, Maumita
dc.contributor.authorFerraro, Filippo
dc.contributor.authorBan, Yoojin
dc.contributor.authorSingh, Nishant
dc.contributor.orcidext0000-0003-3513-6058
dc.date.accessioned2026-05-28T06:55:51Z
dc.date.available2026-05-28T06:55:51Z
dc.date.createdwos2026-03-04
dc.date.issued2025
dc.description.abstractWe present a C-band GeSi EAM fabricated on a 300mm silicon photonics platform, exhibiting a bandwidth beyond 110 GHz. Transmission of 200, 212.5 and 224 GBaud PAM-4 is demonstrated, meeting the 25% OH SD-FEC threshold, highlighting the device's potential for next-generation optical scale-up fabrics.
dc.description.wosFundingTextThis work is partially supported by imec's industrial affiliation R&D program on Optical I/O, imec's AAA program, the EU via the H2020 SiPho-G (101017194) project, and the PhotonDelta National Growth Fund Program (www.photondelta.com). The authors would like to thank the platform, devices and measurement teams.
dc.identifier.doi10.1109/ecoc66593.2025.11262984
dc.identifier.isbn979-8-3315-9532-6
dc.identifier.issnna
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/59448
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherIEEE
dc.source.beginpage1
dc.source.conferenceEuropean Conference on Optical Communications (ECOC)
dc.source.conferencedate2025-09-28
dc.source.conferencelocationCopenhagen
dc.source.endpage4
dc.source.journal2025 EUROPEAN CONFERENCE ON OPTICAL COMMUNICATIONS, ECOC
dc.source.numberofpages4
dc.title

110 GHz GeSi Electroabsorption Modulator on a 300mm SiPh Platform Enabling High-Density 400G/lane IM/DD Links

dc.typeProceedings paper
dspace.entity.typePublication
imec.internal.crawledAt2025-12-08
imec.internal.sourcecrawler
imec.internal.wosCreatedAt2026-04-07
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