Publication:

Trapping in GaN-based MIS-HEMTs: role of high drain bias and hot electrons

Date

2014

Journal article

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Author(s)

Meneghini, Matteo

;

;

;

Stoffels, Steve

;

Van Hove, Marleen

;

;

Decoutere, Stefaan

;

Meneghesso, Gaudio

;

Journal

Applied Physics Letters

Statistics

1953 since deposited on 2021-10-22

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Acq. date: 2026-08-16