ESD-failure of E-mode GaN HEMTs: role of device geometry and charge trapping

Canato, E; Meneghini, M.; Nardo, A.; Masin, F.; Barbato, F.; Barbato, M.; Stockman, Arno; Banerjee, A.; Moens, P.; Zanoni, E.; Meneghesso, G.

Publication:

ESD-failure of E-mode GaN HEMTs: role of device geometry and charge trapping

Date

2019

Journal article

Simple item page Full metadata Statistics

Files

45516.pdf 2.31 MB

Author(s)

;

;

;

;

;

;

;

;

;

;

Journal

Microelectronics Reliability

Statistics

1993 since deposited on 2021-10-27

6last month

Acq. date: 2026-10-12

ESD-failure of E-mode GaN HEMTs: role of device geometry and charge trapping

Date

Files

Author(s)

Journal

Abstract

Description

Statistics

Views

Citations

Statistics

Views

Citations