Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

Favero, D.; De Santi, C.; Mukherjee, K.; Borga, Matteo; Geens, Karen; Chatterjee, Urmimala; Bakeroot, Benoit; Decoutere, Stefaan; Rampazzo, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M.

doi:10.1016/j.microrel.2022.114620

Publication:

Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

Date

2022

Journal article

https://doi.org/10.1016/j.microrel.2022.114620

Simple item page Full metadata Statistics

Author(s)

;

;

;

;

;

;

;

;

;

;

;

Journal

MICROELECTRONICS RELIABILITY

Statistics

1233 since deposited on 2023-01-09

1last month

Acq. date: 2026-08-18

Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

Date

Author(s)

Journal

Abstract

Description

Statistics

Views

Citations

Statistics

Views

Citations