Publication:
Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates
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1964 since deposited on 2021-10-16
4last month
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Acq. date: 2026-08-18
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Statistics
Views
1964 since deposited on 2021-10-16
4last month
1last week
Acq. date: 2026-08-18
Citations