Publication:

Evidence of hot-electron degradation in GaN-based MIS-HEMTs submitted to high temperature constant source current stress

Date

2016

Journal article

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Author(s)

Ruzzarin, Maria

;

Meneghini, Matteo

;

Rossetto, Isabella

;

Van Hove, Marleen

;

Stoffels, Steve

;

;

Decoutere, Stefaan

;

Meneghesso, Gaudenzio

;

Journal

IEEE Electron Device Letters

Statistics

1980 since deposited on 2021-10-23

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Acq. date: 2026-08-14