Publication:

A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack

Date

2007
Proceedings Paper
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Author(s)

Chang, Vincent
;
Ragnarsson, Lars-Ake  
;
Pourtois, Geoffrey  
;
O'Connor, Robert
;
Adelmann, Christoph  
;
Van Elshocht, Sven  
;
Delabie, Annelies  
;
Swerts, Johan  
;
Van der Heyden, Nikolaas
;
Conard, Thierry  
;
Cho, Hag-Ju
;
Akheyar, Amal
;
Mitsuhashi, Riichirou
;
Witters, Thomas  
;
O'Sullivan, Barry  
;
Pantisano, Luigi
;
Rohr, Erika
;
Lehnen, Peer
;
Kubicek, Stefan  
;
Schram, Tom  
;
De Gendt, Stefan  
;
Absil, Philippe  
;
Biesemans, Serge  

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Abstract

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1999 since deposited on 2021-10-16
6last month
Acq. date: 2026-05-28

Citations