MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement

Publication:

2004

Journal article

Author(s)

;

;

;

;

;

;

;

Materials Science & Engineering B (Solid-State Materials for Advanced

1922 since deposited on 2021-10-15

1last month

1last week

Acq. date: 2026-08-16