Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors

Publication:

2023

Journal article

Author(s)

Rai, Narendra

;

;

Mahajan, Ashutosh

;

Laha, Apurba

;

Saha, Dipankar

;

Ganguly, Swaroop

JOURNAL OF APPLIED PHYSICS

858 since deposited on 2024-01-13

1last month

Acq. date: 2026-08-21