Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

Tang, Shun-Wei; Bakeroot, Benoit; Huang, Zhen-Hong; Chen, Szu-Chia; Lin, Wei-Syuan; Lo, Ting-Chun; Borga, Matteo; Wellekens, Dirk; Posthuma, Niels; Decoutere, Stefaan; Wu, Tian-Li

doi:10.1109/ted.2022.3231566

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Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

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2023

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https://doi.org/10.1109/ted.2022.3231566

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IEEE TRANSACTIONS ON ELECTRON DEVICES

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1307 since deposited on 2023-01-25

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Acq. date: 2026-08-20

Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

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