Total-ionizing-dose effects and low-frequency noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 dielectrics

Bonaldo,; Zhao,; O Hara,; Gorchichko,; Zhang,; Gerardin,; Paccagnella,; Waldron, Niamh; Collaert, Nadine; Putcha, Vamsi; Linten, Dimitri; Pantelides,; Reed,; Schrimpf,; Fleetwood,

doi:10.1109/tns.2019.2957028

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Total-ionizing-dose effects and low-frequency noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 dielectrics

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2020

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https://doi.org/10.1109/tns.2019.2957028

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IEEE Transactions on Nuclear Science

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Acq. date: 2026-10-13

Total-ionizing-dose effects and low-frequency noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 dielectrics

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