Negative bias-induced threshold voltage instability (NBTI) in GaN-on-Si power HEMTs

Meneghini, Matteo; Rossetto, Isabella; Bisi, Davide; Ruzzarin, Maria; Van Hove, Marleen; Stoffels, Steve; Wu, Tian-Li; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudio; Zanoni, Enrico

Publication:

Negative bias-induced threshold voltage instability (NBTI) in GaN-on-Si power HEMTs

Date

2016

Journal article

Simple item page Full metadata Statistics

Files

33329.pdf 752.05 KB

Author(s)

;

;

;

;

;

;

;

;

;

;

Journal

IEEE Electron Device Letters

Statistics

1966 since deposited on 2021-10-23

2last month

Acq. date: 2026-10-13

Negative bias-induced threshold voltage instability (NBTI) in GaN-on-Si power HEMTs

Date

Files

Author(s)

Journal

Abstract

Description

Statistics

Views

Citations

Statistics

Views

Citations