Publication:

Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer

Date

2022

Proceedings Paper

https://doi.org/10.1109/ESSDERC55479.2022.9947147

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Author(s)

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Rodriguez, Raul

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Peralagu, Uthayasankaran

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Sibaja-Hernandez, Arturo

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ElKashlan, Rana Y.

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Vermeersch, Bjorn

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Collaert, Nadine

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Parvais, Bertrand

Journal

na

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1338 since deposited on 2023-02-09

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Acq. date: 2026-06-01