Publication:

Quantification of MOSFET device reliability with low-Vt lanthanum-incorporated high permittivity dielectrics

Date

2009
Journal article
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Author(s)

O'Sullivan, Barry  
;
Aoulaiche, Marc
;
Cho, Moon Ju
;
Kauerauf, Thomas
;
Degraeve, Robin  
;
Okawa, Hiroshi
;
Schram, Tom  
;
Hoffmann, Thomas Y.
;
Groeseneken, Guido  
;
Biesemans, Serge  
;
Nakabayashi, Takashi
;
Ikeda, Atsushi
;
Niwa, Masaaki

Journal

Journal of Applied Physics

Abstract

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1980 since deposited on 2021-10-18
3last month
Acq. date: 2026-05-30

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