Publication:

Charge Movement in Back Barrier Induced Time-Dependent On-State Breakdown of GaN HEMT

Date

2023
Proceedings Paper
https://doi.org/10.1109/iedm45741.2023.10413747
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dc.contributor.authorYu, Hao
dc.contributor.authorFang, J.
dc.contributor.authorVermeersch, Bjorn
dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorHan, Han
dc.contributor.authorRichard, Olivier
dc.contributor.authorAlian, AliReza
dc.contributor.authorBraga, N. de Almeida
dc.contributor.authorKazemi Esfeh, Babak
dc.contributor.authorBanerjee, Sourish
dc.contributor.authorBury, Erik
dc.contributor.authorParvais, Bertrand
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2026-06-03T09:55:49Z
dc.date.available2026-06-03T09:55:49Z
dc.date.createdwos2026-03-24
dc.date.issued2023
dc.description.abstractWe elucidate a mechanism behind time-dependent on-state breakdown of GaN HEMTs, where the time-to-failure varies from sub-μs to hundreds of seconds. We reveal that the breakdown is sequentially caused by charge movement in the back barrier (BB), drain-corner electric field densification, impact ionization, and avalanche breakdown. Modeling of charge movement in the BB and impact ionization is key to predicting the on-state breakdown with TCAD.
dc.identifier.doi10.1109/iedm45741.2023.10413747
dc.identifier.issn2380-9248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/59529
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherIEEE
dc.source.conferenceInternational Electron Devices Meeting (IEDM)
dc.source.conferencedate2023-12-09
dc.source.conferencelocationSan Francisco
dc.source.journal2023 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM
dc.source.numberofpages4
dc.title

Charge Movement in Back Barrier Induced Time-Dependent On-State Breakdown of GaN HEMT

dc.typeProceedings paper
dspace.entity.typePublication
imec.internal.crawledAt2026-04-07
imec.internal.sourcecrawler
imec.internal.wosCreatedAt2026-04-07
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