Publication:

High-performance Ge MOS capacitors by O2 plasma passivation and O2 ambient annealing

Date

2011

Journal article

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23488.pdf 280.6 KB

Author(s)

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Schaekers, Marc

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Delabie, Annelies

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Deduytsche, Davy

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Detavemier, Christophe

Journal

IEEE Electron Device Letters

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1966 since deposited on 2021-10-19

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Acq. date: 2026-10-13