Total-Ionizing-Dose Effects on Polycrystalline-Si Channel Vertical-Charge-Trapping Nand Devices

Cao, Jingchen; Wang, Peng Fei; Li, Xun; Guo, Zixiang; Zhang, En Xia; Reed, Robert A.; Alles, Michael L.; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Arreghini, Antonio; Rosmeulen, Maarten; Bastos, Joao P.; Van den Bosch, Geert; Linten, Dimitri

doi:10.1109/tns.2021.3133407

Publication:

Total-Ionizing-Dose Effects on Polycrystalline-Si Channel Vertical-Charge-Trapping Nand Devices

Date

2022

Journal article

https://doi.org/10.1109/tns.2021.3133407

Simple item page Full metadata Statistics

Author(s)

;

;

;

;

;

;

;

;

;

;

;

;

;

Journal

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Statistics

1797 since deposited on 2022-03-30

5last month

2last week

Acq. date: 2026-10-12

Total-Ionizing-Dose Effects on Polycrystalline-Si Channel Vertical-Charge-Trapping Nand Devices

Date

Author(s)

Journal

Abstract

Description

Statistics

Views

Citations

Statistics

Views

Citations