Publication:
High hole mobility in 65 nm strained Ge p-channel field effect transistors with HfO2 gate dielectric
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1970 since deposited on 2021-10-19
4last month
Acq. date: 2026-08-16
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Statistics
Views
1970 since deposited on 2021-10-19
4last month
Acq. date: 2026-08-16
Citations