Top-Gate Stack Engineering Featuring a High-Îº Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides

Lin, Zaoyang; Wu, Xiangyu; Cott, Daire; Shi, Yuanyuan; Medina Silva, Henry; Sergeant, Stefanie; Conard, Thierry; Meersschaut, Johan; Nalin Mehta, Ankit; Groven, Benjamin; Morin, Pierre; Asselberghs, Inge; Lockhart de la Rosa, Cesar Javier; Kar, Gouri Sankar; Lin, Dennis; Delabie, Annelies

doi:10.1021/acsaelm.4c00309

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Top-Gate Stack Engineering Featuring a High-Îº Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides

Date

2024

Journal article

https://doi.org/10.1021/acsaelm.4c00309

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Lockhart de la Rosa, Cesar Javier

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Kar, Gouri Sankar

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Lin, Dennis

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Delabie, Annelies

Journal

ACS APPLIED ELECTRONIC MATERIALS

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687 since deposited on 2024-06-13

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Acq. date: 2026-10-12

Top-Gate Stack Engineering Featuring a High-Îº Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides

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