Propelling Widespread GaN Electronics Adoption With Large Diameter and CMOS Fab-Friendly GaN-on-QST® Manufacturing Platform

Abstract

The SEMI standard thickness, CMOS fab-friendly and large diameter QST® (QROMIS Substrate Technology) substrates enable manufacturing of commercial high-performance GaN power devices with breakdown voltages ranging from 100V to 2000V and beyond. This is achieved by utilizing a polycrystalline ceramic substrate core with the coefficient of thermal expansion (CTE) matched to GaN over a wide temperature range. In this work, the status of 200mm and 300mm commercial QST® substrates and GaN-on-QST® epi-wafers will be discussed. The production status of 650V GaN-on-QST® E-mode HEMT devices on a commercial, high volume 200mm CMOS foundry manufacturing platform is presented. Also, the results of the development work in 200mm CMOS fabs on high-quality 1,200V E-mode HEMTs are included.