Browsing by Author "Temst, Kristiaan"
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Publication A growth and morphology study of organic vapor phase deposited perylene diimide thin films for transistor applications
Journal article2010, Journal of Physical Chemistry C, (114) 6, p.2730-2737Publication ALD on high mobility channels: engineering the proper gate stack passivation
Meeting abstract2010, 218th ECS Meeting Symposium ' Atomic Layer Deposition Applications 6', 10/10/2010, p.1401Publication Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
Proceedings paper2010-10, SiGe, Ge, and Related Compounds: Materials, Processing, and Devices, 10/10/2010, p.529-535Publication Atomic layer deposition of high-k dielectrics on sulphur-passivated germanium
Journal article2011, Journal of the Electrochemical Society, (158) 7, p.H687-H692Publication Atomistic Modeling of Spin and Electron Dynamics in Two-Dimensional Magnets Switched by Two-Dimensional Topological Insulators
Journal article2023, PHYSICAL REVIEW APPLIED, (19) 1, p.Art. 014040Publication BiFeO3 thin films via aqueous solution depostion: a study of phase formation and stabilization
Journal article2015, Journal of Materials Science, 50, p.4463-4476Publication Correlating the polymorphism of titanyl phthalocyanine thin films with solar cell performance
Journal article2012, Journal of Physical Chemistry Letters, 3, p.2395-2400Publication Correlation between morphology and electrical characteristics of organic vapor phase deposited PTCDI-C13 thin film transistors
Proceedings paper2010, International Conference on Organic Electronics - ICOE, 22/06/2010Publication Crystalline properties and strain relaxation mechanism of CVD grown GeSn
Meeting abstract2012, ECS Fall Meeting Symposium: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices, 7/10/2012, p.3213Publication Crystalline properties and strain relaxation mechanism of CVD grown GeSn
Proceedings paper2012, SiGe, Ge, and Related Compunds 5: Materials, Processing, and Devices, 7/10/2012, p.875-883Publication Crystalline properties and strain relaxation mechanism of CVD grown GeSn
Journal article2013, ECS Journal of Solid State Science and Technology, (2) 4, p.P134-P137Publication Development of the Ni(001) surface morphology upon low energy Ar+ ion bombardment
Meeting abstract2009, 16th International Summer School on Vacuum, Electron and Ion Technologies, 28/09/2009Publication Electrical detection and control of synthetic antiferromagnets via perpendicular nanoscale magnetic tunnel junctions
Journal article2026, PHYSICAL REVIEW APPLIED, (25) 3, p.034083Publication Electronic voltage control of magnetic anisotropy at room temperature in high-k SrTiO3\Co\Pt trilayer
Journal article2020, Physical Review Materials, (4) 11, p.114415Publication Elemental redistribution of Pt and Pd in nickel silicides: a comparative study
Meeting abstract2012, Materials for Advanced Metallization - MAM, 11/03/2012, p.O4-4Publication Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution
Proceedings paper2009, IEEE International Electron Device Meeting - IEDM, 7/12/2009, p.327-330Publication Enhanced SOT Efficiency in Pt/Co Systems with a NiO Interlayer for SOT-MRAM
Proceedings paper2024, IEEE International Magnetics Conference (INTERMAG), MAY 05-10, 2024Publication Epitaxial growth of magnetron sputtered NiAl on Ge mediated by native GeOx
Journal article2024, JOURNAL OF PHYSICS D-APPLIED PHYSICS, (57) 13, p.Art. 135309Publication EXAFS investigation of Sn local environment in strained and relaxed epitaxial Ge1xSnx films
Oral presentation2015, Synchrotron and Neutron Workshop - SyNeWPublication EXAFS study of Sn local environment in strained and relaxed CVD grown epitaxial GeSn films
Proceedings paper2013, 8th International conference on Silicon Epitaxy and Heterostructures - ICSI-8, 2/06/2013, p.59-60