Browsing by Author "O'Donnell, K. P."
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Publication Cathodoluminescence from an InGaN/GaN MQW grown on an epitaxially laterally overgrown GaN epilayer
Publication Cathodoluminescence from InGaN/GaN MQW grown on an epitaxially lateral overgrown GaN epilayer
Publication Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
; ; White, M. E.Proceedings paper2000, GaN and Related Alloys - 1999, 29/11/1999, p.W11.38.1Publication Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
; ; White, M. E.Journal article2000, MRS Internet Journal of Nitride Semiconductor Research, 5, Suppl. 1, p.W11.38Publication Confocal microscopy and spectroscopy of InGaN epilayers on sapphire
Publication Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer
Journal article2000, Applied Physics Letters, (77) 4, p.507-509Publication Energy-dispersive x-ray imaging of an InGaN/GaN bilayer on sapphire
Publication Exciton localization and the Stokes' shift in InGaN epilayers
Publication Hexagonal growth hillocks in GaN epilayers
Publication Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire
Publication Intrinsic infrared luminescence from InGaN epilayers
Publication Intrinsic infrared luminescence from InGaN layers
Publication Intrinsic InGaN luminescence from UV to IR
; Oral presentation1999, 1st UK Nitrides Consortium Conference; 24 September 1999; Glasgow, Scotland.Publication Optical linewidths of InGaN light emitting diodes and epilayers
Journal article1997, Applied Physics Letters, (70) 14, p.1843-1845Publication Optical spectroscopy and composition of GaN
Proceedings paper2000, GaN and related alloys - 1999, 29/11/1999, p.W11.26.1-6Publication Optical spectroscopy and composition of InGaN
Oral presentation1999, MRS Fall Meeting Symposium W: GaN and Related AlloysPublication Photoluminescence mapping and Rutherford backscattering of InGaN epilayers
Meeting abstract1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 4/06/1999, p.87Publication Photoluminescence mapping and Rutherford backscattering spectrometry of InGaN epilayers
Journal article1999, Physica Status Solidi B, (216) 1, p.171-174Publication Photoluminescence mapping and Rutherford backscattering spectrometry of InGaN epilayers
Oral presentation1999, 1st UK Nitrides Consortium ConferencePublication Probing nitride thin films in 3-dimensions using a variable energy electron beam