Browsing by Author "Kar, Gouri Sankar"
- Results per page
- Sort Options
Publication 10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Proceedings paper2011, IEEE International Electron Devices Meeting - IEDM, 5/12/2011, p.729-732Publication 3D-DRAM Si/SiGe superlattices: inspection strategies and evaluation
Proceedings paper2025, 2025 Conference on Metrology Inspection and Process Control-Annual, 2025-02-24, p.1342612-1Publication A Co/Ni-based perpendicular magnetic tunnel junction (p-MTJ) stack with improved reference layer for BEOL compatibility
Meeting abstract2016, MMM Intermag, 11/01/2016Publication A combinatorial study of SiGeAsTe thin films for application as an Ovonic threshold switch selector
Journal article2022-07-01, THIN SOLID FILMS, (753) /, p.139278Publication A comparative analysis on the impact of bank contention in STT-MRAM and SRAM based LLCs
Proceedings paper2019, International Conference on Computer Design - ICCD, 17/11/2019, p.1-9Publication A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
Proceedings paper2019, Semiconductors, Dielectrics, and Metals for Nanoelectronics 17, 13/10/2019, p.45-55Publication A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
Journal article2020, ECS Journal of Solid State Science and Technology, (9) 4, p.044006-1-044006-7Publication A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices
Journal article2023, IEEE TRANSACTIONS ON ELECTRON DEVICES, (70) 4, p.1808-1814Publication A New Surface Potential and Physics Based Compact Model for a-IGZO TFTs at Multinanoscale for High Retention and Low-Power DRAM Application
Proceedings paper2021, IEEE International Electron Devices Meeting (IEDM), DEC 11-16, 2021Publication A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology
Journal article2011, Electrochemical and Solid-State Letters, (14) 7, p.271-273Publication A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology
Proceedings paper2010, IEEE Semiconductor Interface Specialists Conference - SISC, 2/12/2010Publication A smaller, faster and more energy-efficient complementary STT-MRAM cell uses three transistors and a ground grid: more is actually less
Journal article2017, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, (25) 4, p.1204-1214Publication A Systematic Assessment of W-Doped CoFeB Single Free Layers for Low Power STT-MRAM Applications
Journal article2021, ELECTRONICS, (10) 19, p.2384Publication Accurate off-current evaluation by parasitic capacitance extraction in capacitor-less DRAM cells
Proceedings paper2025, IEEE International Memory Workshop (IMW), 2025-05-18, p.13-16Publication Advanced characterization of 2D materials using SEM image processing and machine learning
Proceedings paper2024, Conference on Metrology, Inspection, and Process Control XXXVIII, FEB 26-29, 2024, p.129550XPublication All-Electrical Control of Scaled Spin Logic Devices Based on Domain Wall Motion
Journal article2021, IEEE TRANSACTIONS ON ELECTRON DEVICES, (68) 4, p.2116-2122Publication Analysis of complementary RRAM switching
Journal article2012, IEEE Electron Device Letters, (33) 8, p.1186-1188Publication Annealing stability of magnetic tunnel junctions no dual MgO free layers and Co/Ni based synthetic antiferromagnetic reference system
Journal article2017, Journal of Applied Physics, (121) 11, p.113904Publication Asymmetric and Adaptive Error Correction in STT-MRAM
Journal article2025, IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, (44) 9, p.3336-3349Publication Asymmetry and switching phenomenology in TiN(Al2O3)\HfO2\Hf systems
Journal article2012-08, ECS Solid State Letters, (1) 4, p.P63-P65