Browsing by Author "Hamilton, A. R."

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Holes in silicon are heavier than expected: Transport properties of extremely high mobility electrons and holes in silicon MOSFETs

Wendoloski, J. P.
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Hillier, J.
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Liles, S. D.
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Rendell, M. J.
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Ashlea-Alava, Y.
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Raes, B.
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Li, R.
Journal article
2026, PHYSICAL REVIEW B, (113) 4, p.045302
Probing the spin states of a single acceptor atom

van der Heijden, J.
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Salfi, J.
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Mol, J.A.
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Verduijn, J.
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Tettamanzi, G.C.
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Hamilton, A. R.
Journal article
2014, Nano Letters, (14) 3, p.1492-1496